Eu3+-based efficient red phosphors Y1-xEuxGa3(BO3)(4) (0
Eu3+-based efficient red phosphors Y1-xEuxGa3(BO3)(4) (0
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Eu3基高效红色荧光粉Y1-xEuxGa3(BO3)4 (0
DOI：
10.1016/j.jssc.2019.07.031
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发表时间：
2019
影响因子：
3.3
通讯作者：
Yang Tao
中科院分区：
文献类型：
--
作者：
Lu Guangxiang;Yin Chao;Zhou Xianju;Yang Ruirui;Jiang Pengfei;Cong Rihong;Yang Tao
目前的白光发光二极管（WLED）采用InGaN芯片和黄色荧光粉Y3Al5O12:Ce3+，但存在红色成分不足的弱点。除了传统的Eu2+或Mn4+基红色荧光粉外，我们提出非中心对称配位的Eu3+可以作为纯红光发射的替代品，最重要的是，它可以通过近紫外（NUV）区域的f-f跃迁有效激发。通过典型的固相反应制备了Y1-xEuxGa3(BO3)4的完全固溶体，晶体学精修证明了成功的阳离子取代，其中Eu3+仅位于Y3+位点。 Eu3+与氧原子呈三棱柱对称配位，在393nm激发下发出强烈而纯的红光，CIE坐标为（0.667，0.333）。 x=0.1、0.5和1的样品的内量子产率分别高达81%、80%和75%。原位高温光致发光研究证实，与室温下的值相比，Y0.1Eu0.9Ga3(BO3)4 在 423K 下保留了 84% 的发射强度，这对于 NUV LED 应用来说足够好。
The current white light emitting diode (WLED) employs an InGaN chip together with the yellow phosphor Y3Al5O12:Ce3+, however it has a weakness of insufficient red component. In addition to traditional Eu2+or Mn4+based red phosphors, we propose that Eu3+in a noncentrosymmetric coordination could be an alternative for pure red emission and most importantly, it could be efficiently excited byf-ftransitions in the near ultraviolet (NUV) region. Complete solid solutions of Y1-xEuxGa3(BO3)4were prepared by typical solid state reactions, and the crystallographic refinements proved the successful cationic substitutions, where Eu3+locates at the Y3+site exclusively. Eu3+is coordinated by oxygen atoms in a triangular prism symmetry, thus emits a strong and pure red light with the CIE coordinate (0.667, 0.333) upon 393 nm excitation. The internal quantum yields for the samples withx= 0.1, 0.5 and 1 are as high as 81%, 80% and 75%, respectively. In-situ high temperature photoluminescence study confirmed that Y0.1Eu0.9Ga3(BO3)4retained 84% of the emission intensity at 423 K compared to the value at room temperature, which is sufficiently good for NUV LED applications.