On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates
On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates
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块状 AlN 衬底中 4 7 eV 吸收带和 2 8 eV 发射带的起源
DOI：
10.1149/07205.0031ecst
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
R. Collazo
中科院分区：
文献类型：
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作者：
D. Alden;Z. Bryan;B. Gaddy;I. Bryan;G. Callsen;A. Koukitu;Y. Kumagai;A. Hoffmann;D. Irving;Z. Sitar;R. Collazo
基于AlN中的点缺陷的主要限制之一与存在于265 nm处的UV吸收带有关。这种相对宽的吸收带限制了在深UV范围内使用体衬底，并且已经设计了几种复杂的制造过程来克服这种限制。这个吸收带的起源沿着与相应的光致发光签名将被审查。CN-和VN+被确定为与4.7 eV处的主吸收和2.8 eV处的发射直接相关的点缺陷。主要的吸收是由于CN-状态和导带之间的跃迁，而发射则是由于通过4.7 eV激发通道的施主VN+和受主CN-之间的DAP跃迁。提出了基于光致发光激发的新观测结果，以进一步支持以前所做的分配。
One of the main limitations based on point defects in AlN is related to the UV absorption band present at 265 nm. This relatively broad absorption band limits the use of bulk substrates within the deep UV range and several complicated fabrication procedures have been devised to overcome this limitation. The origin for this absorption band along with corresponding photoluminescence signatures will be reviewed. CN-and VN+ were identified as the point defects directly associated with the main absorption at 4.7 eV and the emission at 2.8 eV. The main absorption is due to a transition between the CN-state and conduction band, while the emission arises from a DAP transition between the donor VN+ and acceptor CN-through the 4.7 eV excitation channel. New observations based on photoluminescence excitation are presented to further support the assignments previously made.