Modeling the capacitive nonlinearity in thin-film BST varactors
Modeling the capacitive nonlinearity in thin-film BST varactors
复制标题
薄膜 BST 变容二极管的电容非线性建模
DOI：
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发表时间：
2005
影响因子：
4.3
通讯作者：
Robert A. York
中科院分区：
文献类型：
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作者：
David R. Chase;Lee;Robert A. York
对高介电常数钛酸钡锶（BST）薄膜器件的介电非线性进行了三阶幂级数展开，得到了一个简单的封闭表达式。该表达式是参数化的零场电容和调谐比的容易测量的量，并与几个代表性的BST组成和器件尺寸的数据比较有利。电容器的温度依赖性是用零场电容的简单线性温度系数来处理的，这也与BST电容器的实验数据比较有利。讨论了界面（“死”层）、条纹和寄生并联电容对实验C-V曲线的影响。研究结果对电路和电磁仿真具有潜在的实用价值。
A simple closed-form expression for the dielectric nonlinearity in thin-film high-permittivity barium strontium titanate (BST) devices is obtained from a third-order power-series expansion for the field-polarization relation. The expression is parameterized in terms of easily measurable quantities of zero-field capacitance and tuning ratio, and compares favorably with data on several representative BST compositions and device sizes. The temperature dependence of the capacitors is treated using a simple linear temperature coefficient in the zero-field capacitance that also compares favorably with experimental data on BST capacitors. The influence of interfacial ("dead" layer), fringing, and parasitic shunt capacitance on the experimental C-V curves is discussed. The results are potentially useful for circuit and electromagnetic simulation.