Photodetecting properties of ZnO-based thin-film transistors
Photodetecting properties of ZnO-based thin-film transistors
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DOI：
10.1063/1.1633676
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发表时间：
2003-12-22
影响因子：
4
通讯作者：
Im, S
中科院分区：
文献类型：
--
作者：
Bae, HS;Yoon, MH;Im, S
报道了用射频磁控溅射技术在常温下在SiO_2/p-Si衬底上制备的氧化锌基薄膜晶体管(TFT)的光电探测特性。我们的氧化锌基薄膜晶体管在40V栅压下的饱和电流水平约为6.5MUA，电子迁移率为0.1 cm(2)/V S，在黑暗中通断电流比接近10(6)。在紫外光(波长=340 nm)、蓝光(波长=450 nm)和绿光(波长=540 nm)、光强为0.7 mW/cm(2)的照射下，在栅压为40V时，TFT的光电流增益分别为50、32和15MUA。在栅偏压为-30V的沟道耗尽态，光检测灵敏度远高于累积态。因此，我们的氧化锌基薄膜晶体管不仅可以作为电子器件，而且可以作为一种良好的紫外光探测器件。(C)2003年美国物理研究所。
We report on the photodetecting properties of a ZnO-based thin-film transistor (TFT) that has been fabricated on a SiO2/p-Si substrate by rf magnetron sputtering at room temperature. Our ZnO-based TFT exhibited a saturation current level of about 6.5 muA under a gate bias of 40 V, decent electron mobility of 0.1 cm(2)/V s, and on/off current ratio of similar to10(6) in the dark. Illuminated by ultraviolet (lambda=340 nm), blue (lambda=450 nm), and green (lambda=540 nm) light with intensity of 0.7 mW/cm(2), our TFT displays high photocurrent gain of 50, 32, and 15 muA, respectively, under a gate bias of 40 V. In the channel depletion state with gate bias of -30 V, the photodetecting sensitivity becomes much higher than in the accumulation state. It is thus concluded that our ZnO-based TFT can be a good UV photodetecting device as well as an electronic device. (C) 2003 American Institute of Physics.