Pi-Gate SOI MOSFET
Pi-Gate SOI MOSFET
复制标题
DOI：
10.1109/55.936358
复制
发表时间：
2001-08
影响因子：
4.9
通讯作者：
Jong Tae Park;J. Colinge;Carlos H. Díaz
中科院分区：
文献类型：
--
作者：
Jong Tae Park;J. Colinge;Carlos H. Díaz
本文描述了各种双栅和三栅结构SOI MOSFET以及环栅器件的计算机模拟。介绍了一种侧壁延伸到埋氧层中的三栅器件（以下称为“π/π栅”或“π栅”MOSFET）的概念。所提出的器件制造简单，并且提供了与更难制造的全包围栅MOSFET相似的电特性。
This paper describes computer simulations of various SOI MOSFETs with double and triple gate structures, as well as gate-all-around devices. The concept of a triple-gate device with sidewalls extending into the buried oxide (hereby called a "/spl Pi/-gate" or "Pi-gate" MOSFET) is introduced, The proposed device is simple to manufacture and offers electrical characteristics similar to the much harder to fabricate gate-all-around MOSFET.