Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors
Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors
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DOI：
10.1063/1.4930236
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发表时间：
2015-09-14
影响因子：
4
通讯作者：
Dash, Saroj P.
中科院分区：
文献类型：
--
作者：
Kamalakar, M. Venkata;Madhushankar, B. N.;Dash, Saroj P.
纳米层黑磷（BP）是一种直接带隙半导体二维晶体，在未来的纳米电子器件中显示出巨大的前景。本文报道了高k介电和离子液体栅极在BP场效应晶体管（BP FET）中的作用。在电流调制为10(4)的原始BP fet中观察到双极性行为。通过高k的HfO2封装，我们观察到BP fet具有相同的开关性能，但是在室温下迁移率明显增强。与原始器件相比，HfO2封装在较低温度下的迁移率明显下降。与固态SiO2背门控器件相比，双电层离子液体栅极BP fet的亚阈值摆幅（SS）显著提高至173 mV/dec，工作电压小于0.5V。我们的研究结果阐明了不同静电条件对BP晶体管通道的影响，并为进一步探索其在纳米电子器件和电路中的应用前景开辟了道路。(C) 2015 AIP出版有限责任公司
Nanolayer black phosphorus (BP) is a direct bandgap semiconducting two dimensional crystal, showing immense promise for future nanoelectronic devices. Here, we report the effect of high-k dielectric and ionic-liquid gate in BP field effect transistors (BP FET). An ambipolar behavior is observed in pristine BP FETs with current modulation of 10(4). With a high-k HfO2 encapsulation, we observed identical switching performance in the BP FETs, however, with noticeable enhancement in mobility at room temperature. In comparison to the pristine device, the HfO2 encapsulation showed a contrasting decrease in mobility at lower temperatures. BP FETs with electric double layer ionic liquid gate showed a drastic improvement in the subthreshold swing (SS) to 173 mV/dec and operation voltages less than 0.5V in comparison to solid state SiO2 back gated devices. Our results elucidate the effect of different electrostatic conditions on BP transistor channels and open up ways for further exploration of their prospects for nanoelectronic devices and circuits. (C) 2015 AIP Publishing LLC.