Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits
Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits
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基于碳纳米管的弹道 CMOS 器件和电路的无掺杂制造
DOI：
10.1021/nl0717107
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发表时间：
2007-12-01
期刊：
影响因子：
10.8
通讯作者：
Peng, Lian-Mao
中科院分区：
文献类型：
--
作者：
Zhang, Zhiyong;Liang, Xuelei;Peng, Lian-Mao
我们用Sc与半导体单壁碳纳米管接触，制备了弹道n型碳纳米管基场效应晶体管(FET)。与使用PD接触的弹道p型CNT FET一起，我们的工作填补了无掺杂制造基于CNT的弹道互补金属氧化物半导体(CMOS)器件和电路的空白。我们用背栅结构在SiO_2/Si衬底上制作了一个简单的反相器，从而证明了这种无掺杂CMOS技术的可行性，但原则上，在任何合适的绝缘体衬底上，使用顶栅结构和高卡伯介电体，可以在碳纳米管上集成更复杂的CMOS电路。这种基于碳纳米管的CMOS技术只需要对直径范围较窄的平行半导体碳纳米管阵列进行图案化，例如1.6-2.4 nm，这在当前的纳米技术范围内。这可能会导致基于碳纳米管的CMOS器件的集成，使其变得越来越复杂，并可能进入计算机的大脑：逻辑电路。
We have fabricated ballistic n-type carbon nanotube (CNT)-based field-effect transistors (FETs) by contacting semiconducting single wall CNTs using Sc. Together with the demonstrated ballistic p-type CNT FETs using Pd contacts, our work closes the gap for doping-free fabrication of CNT-based ballistic complementary metal-oxide semiconductor (CMOS) devices and circuits. We demonstrated the feasibility of this dopingfree CMOS technology by fabricating a simple CMOS inverter on a SiO2/Si substrate using the back-gate geometry, but in principle much more complicated CMOS circuits may be integrated on a CNT on any suitable insulator substrate using the top-gate geometry and high-kappa dielectrics. This CNT-based CMOS technology only requires the patterning of arrays of parallel semiconducting CNTs with moderately narrow diameter range, for example, 1.6-2.4 nm, which is within the reach of current nanotechnology. This may lead to the integration of CNT-based CMOS devices with increasing complexity and possibly find its way into the computers brain: the logic circuit.