Inter-granular Magneto-resistance of Half-Metallic Ferromagnet CrO2 with Cr2 O5 Barriers
Inter-granular Magneto-resistance of Half-Metallic Ferromagnet CrO2 with Cr2 O5 Barriers
复制标题
具有 Cr2 O5 势垒的半金属 CrO2 铁磁体的晶间磁阻
DOI：
10.3379/tmjpn2001.4.17
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
T. Sasaki
中科院分区：
文献类型：
--
作者：
Y. Kimishima;M. Uehara;Y. Satoh;T. Sasaki
测量了自旋极化半金属铁磁体CrO 2纳米颗粒样品在77 K和300 K下的磁电阻（MR）。它们是由CrO 3的前体在微反应器中在598 K和723 K之间的温度下在0.5和10 MPa的氧气压力下制备的。对于含有Cr2 O 5和/或Cr2 O3杂质的CrO 2，观察到室温MR比为-0.13至-0.45%和77 K MR比为-2.3至-3.4%。结果表明，Cr205在CrO 2纳米颗粒之间形成了良好的隧道势垒，这可能是由于Cr205在300 K时的弱磁性所致。
Magneto-resistances (MR) were measured at 77 K and 300 K for spin-polarized half-metallic ferromagnet CrO2 nano-granular samples. They were prepared from the precursor of CrO3 in a micro-reactor at temperatures between 598K and 723K under oxygen gas pressures of 0.5 and 10 MPa. Room temperature MR ratios of -0.13 to -0.45% and 77 K MR ratios of -2.3 to -3.4% were observed for CrO2 with Cr2O5 and/or Cr2O3 impurities. The results showed that the Cr205 forms well tunnel barriers between CrO2 nano-grains, probably due to the weak magnetic property at 300K.