Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
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DOI：
10.1063/1.3443734
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发表时间：
2010-06-07
影响因子：
4
通讯作者：
Kikuchi, Akihiko
中科院分区：
文献类型：
--
作者：
Sekiguchi, Hiroto;Kishino, Katsumi;Kikuchi, Akihiko
开发了一种在同一晶圆上控制InGaN量子阱In成分的新技术，为三基色纳米发光二极管的单片集成铺平了道路。实验中，采用射频等离子体辅助分子束外延技术，在Ti掩模选区生长的同一衬底上制备了纳米柱直径为137~270 nm的InGaN/GaN多量子阱纳米柱阵列。随着纳米柱直径的增加，发射颜色从蓝色变为红色（波长从479 nm变为632 nm）。相邻纳米柱的光束阴影效应清楚地解释了发射颜色变化机制。 (C) 2010 年美国物理研究所。 [号码：10.1063/1.3443734]
A novel technology for controlling the In composition of InGaN quantum wells on the same wafer was developed, which paved the way for the monolithic integration of three-primary-color nano-light-emitting diodes. In the experiment, InGaN/GaN multiple quantum well nanocolumn arrays with nanocolumn diameters from 137 to 270 nm were prepared on the same substrate with the Ti-mask selective area growth by rf-plasma-assisted molecular beam epitaxy. The emission color changed from blue to red (from 479 to 632 nm in wavelength) with increasing nanocolumn diameter. The emission color change mechanism was clearly explained by the beam shadow effect of the neighboring nanocolumns. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3443734]