3D-LSI technology for image sensor
3D-LSI technology for image sensor
复制标题
DOI：
10.1088/1748-0221/4/03/p03009
复制
发表时间：
2009-03
影响因子：
1.3
通讯作者：
M. Motoyoshi;M. Koyanagi
中科院分区：
文献类型：
--
作者：
M. Motoyoshi;M. Koyanagi
近年来，三维大规模集成（3D-LSI）技术的发展加速，已从研究水平或有限生产水平推进到可能实现量产的研究水平。通过将3D-LSI技术分解为基本技术，例如（1）硅通孔（TSV）形成、（2）凸块形成、（3）晶圆减薄、（4）芯片/晶圆对准、以及（5）芯片/晶圆堆叠以及重构整个工艺和结构，可以开发许多实现3D-LSI器件的方法。然而，通过考虑特定应用、基础晶圆的供应链以及 3D 集成的目的，可以确定一些合适的组合。在本文中，我们重点关注 3D-LSI 技术在图像传感器中的应用。我们描述了基于当前先进的 3D-LSI 技术开发的、用于 CMOS 图像传感器的芯片尺寸封装 (CSP) 的工艺和结构。利用当前的 LSI 技术，成功制造了 130 万、200 万和 500 万像素 CMOS 图像传感器的 CSP，且没有任何性能下降。 3D-LSI 器件可用于高性能焦平面阵列图像传感器。我们建议使用下一代 3D-LSI 技术开发光学填充因子为 100% 的高速图像传感器，并使用微 (μ) 凸块和微 (μ) -TSV 制造。
Recently, the development of three-dimensional large-scale integration (3D-LSI) technologies has accelerated and has advanced from the research level or the limited production level to the investigation level, which might lead to mass production. By separating 3D-LSI technology into elementary technologies such as (1) through silicon via (TSV) formation, (2) bump formation, (3) wafer thinning, (4) chip/wafer alignment, and (5) chip/wafer stacking and reconstructing the entire process and structure, many methods to realize 3D-LSI devices can be developed. However, by considering a specific application, the supply chain of base wafers, and the purpose of 3D integration, a few suitable combinations can be identified. In this paper, we focus on the application of 3D-LSI technologies to image sensors. We describe the process and structure of the chip size package (CSP), developed on the basis of current and advanced 3D-LSI technologies, to be used in CMOS image sensors. Using the current LSI technologies, CSPs for 1.3 M, 2 M, and 5 M pixel CMOS image sensors were successfully fabricated without any performance degradation. 3D-LSI devices can be potentially employed in high-performance focal–plane-array image sensors. We propose a high-speed image sensor with an optical fill factor of 100% to be developed using next-generation 3D-LSI technology and fabricated using micro(μ)-bumps and micro(μ)-TSVs.