Catalytic growth and characterization of gallium nitride nanowires
Catalytic growth and characterization of gallium nitride nanowires
复制标题
DOI：
10.1021/ja0040518
复制
发表时间：
2001-03-28
影响因子：
15
通讯作者：
Chen, YF
中科院分区：
文献类型：
--
作者：
Chen, CC;Yeh, CC;Chen, YF
高纯度高质量氮化镓纳米线的制备是通过使用镓和铵的催化生长来完成的。采用一系列的催化剂和不同的反应参数，系统地优化和控制纳米线的气-液-固（VLS）生长。所得纳米线主要显示纤锌矿相;它们的长度可达几微米，通常直径为10-50 nm。已经实现了6 nm的最小纳米线直径。纳米线的光致发光光谱的温度依赖性表明，发射主要来自纤锌矿GaN与立方相的贡献很小。此外，GaN纳米线的光致发光的热猝灭大大减少。拉曼光谱显示出五个一阶声子模。这些峰的频率接近块状GaN的频率，但模式显著加宽，这表明与系统的纳米尺度相关的声子限制效应。另外的拉曼模式，没有观察到在体GaN，被发现在纳米线。场发射研究表明，显着的发射电流与低开启场表明GaN纳米线在场发射应用中的潜力。这项工作为半导体纳米线的基本性质和潜在应用的详细研究开辟了广阔的道路。
The preparation of high-purity and -quality gallium nitride nanowires is accomplished by a catalytic growth using gallium and ammonium. A series of catalysts and different reaction parameters were applied to systematically optimize and control the vapor-liquid-solid (VLS) growth of the nanowires. The resulting nanowires show predominantly wurtzite phase; they were up to several micrometers in length, typically with diameters of 10-50 nm. A minimum nanowire diameter of 6 nm has been achieved. Temperature dependence of photoluminescence spectra of the nanowires revealed that the emission mainly comes from wurtzite GaN with little contribution from the cubic phase. Moreover, the thermal quenching of photoluminescence was much reduced in the GaN nanowires. The Raman spectra showed five first-order phonon modes. The frequencies of these peaks were close to those of the bulk GaN, but the modes were significantly broadened, which is indicative of the phonon confinement effects associated with the nanoscale dimensions of the system. Additional Raman modes, not observed in the bulk GaN, were found in the nanowires. The field emission study showing notable emission current with low turn-on field suggests potential of the GaN nanowires in field emission applications. This work opens a wide route toward detailed studies of the fundamental properties and potential applications of semiconductor nanowires.