Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor
Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor
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DOI：
10.1063/1.2093940
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发表时间：
2005-10-10
影响因子：
4
通讯作者：
Cho, KW
中科院分区：
文献类型：
--
作者：
Jang, Y;Kim, DH;Cho, KW
并五苯薄膜晶体管（TFT）的迁移率与其绝缘体的介电性质相关。我们通过改变预聚物/交联剂的摩尔比，同时保持绝缘体表面的表面电位恒定，来改变这种TFT的聚（4-乙烯基苯酚）绝缘体的介电性质。有人发现，并五苯TFT的场效应迁移率随着绝缘体的介电常数的增加而增加。发现绝缘体的介电常数的小幅增加（增加20%，3.6-4.3）导致并五苯TFT的场效应迁移率急剧增加3倍（0.26至0.81 cm（2）/V s）。(C)2005年美国物理学会。
The mobility of pentacene thin-film transistors (TFTs) is correlated with the dielectric properties of their insulators. We varied the dielectric properties of the poly(4-vinylphenol) insulators of such TFTs by changing the molar ratio of the prepolymer/cross-linking agent while keeping the surface potential of the insulator surface constant. It was found that the field-effect mobility of the pentacene TFTs increases with increases in the dielectric constant of the insulators. A small increase in the dielectric constant of the insulator (a 20% increase, 3.6-4.3) was found to result in a dramatic increase in the field-effect mobility of pentacene TFTs by a factor of 3 (0.26 to 0.81 cm(2)/V s). (C) 2005 American Institute of Physics.