Metal-semiconductor 1T/2H-MoS2 by a heteroatom-doping strategy for enhanced electrocatalytic hydrogen evolution
Metal-semiconductor 1T/2H-MoS2 by a heteroatom-doping strategy for enhanced electrocatalytic hydrogen evolution
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通过杂原子掺杂策略增强电催化析氢的金属半导体1T/2H-MoS2
DOI：
10.1016/j.catcom.2021.106325
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发表时间：
2021-05-17
影响因子：
3.7
通讯作者：
Feng, Qingliang
中科院分区：
文献类型：
--
作者：
Jiang, Yimin;Li, Sihan;Feng, Qingliang
由于1 T-MoS 2的合成工艺复杂且不稳定，阻碍了其在析氢反应中的实际应用。在这里，我们提出了一种新的策略，以驱动稳定的1 T-MoS 2的合成Ni掺杂。Ni掺杂形成Ni-S共价键，诱导S原子滑移，稳定1 T结构。用透射电子显微镜、X射线光电子能谱和拉曼光谱对材料进行了表征。线性扫描伏安法等电化学测试表明，1 T/2 H-MoS 2/8%Ni的过电位为162 mV，塔菲尔斜率为80 mV dec（-1）沿着，稳定性良好。
Complicated synthesis procedure and instability of 1T-MoS2 impede its practical application for hydrogen evolution reaction. Here, we propose a new strategy to drive the synthesis of stabilized 1T-MoS2 by Ni doping. Ni doping forms the Ni - S covalent bonds, inducing the slip of S atoms and stabilizing 1T structure. The materials were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Electrochemical tests including linear sweep voltammetry etc. indicate that the 1T/2H-MoS2/8%Ni has an overpotential of 162 mV and a Tafel slope of 80 mV dec(-1) along with a good stability.