Opening an energy gap in an electron double layer system at the integer filling factor in a tilted magnetic field
Opening an energy gap in an electron double layer system at the integer filling factor in a tilted magnetic field
复制标题
在倾斜磁场中以整数填充因子打开电子双层系统中的能隙
DOI：
--
复制
发表时间：
2000
期刊：
影响因子：
--
通讯作者：
A. Gossard
中科院分区：
文献类型：
--
作者：
E. Deviatov;V. Khrapai;A. Shashkin;V. Dolgopolov;F. Hastreiter;A. Wixforth;K. Campman;A. Gossard
我们利用磁电容测量方法研究了倾斜磁场中具有栅压可调电子密度分布的双层系统的光谱。对于填充因子v=3和4时的正常磁场中的耗散态，发现平行的磁场分量在费米能级引起能隙的打开。我们用平行场引起的两个子带不同量子数的朗道波函数的正交性破缺来解释这种影响。
We employ magnetocapacitance measurements to study the spectrum of a double layer system with gate-voltage-tuned electron density distributions in tilted magnetic fields. For the dissipative state in normal magnetic fields at filling factor v=3 and 4, a parallel magnetic field component is found to give rise to the opening of a gap at the Fermi level. We account for the effect in terms of parallel-field-caused orthogonality breaking of the Landau wave functions with different quantum numbers for two subbands.