High-performance solution-processed polymer ferroelectric field-effect transistors
High-performance solution-processed polymer ferroelectric field-effect transistors
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DOI：
10.1038/nmat1329
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发表时间：
2005-03-01
期刊：
影响因子：
41.2
通讯作者：
De Leeuw, DM
中科院分区：
文献类型：
--
作者：
Naber, RCG;Tanase, C;De Leeuw, DM
我们演示了一种可重写的、非易失性的存储器件，其柔性塑料有源层由溶液沉积而成。该存储器件是一种铁电场效应晶体管（FeFET），由铁电含氟聚合物和双烷氧基取代的聚（对苯乙烯）乙烯基半导体材料制成。通断漏极电流相差几个数量级，保持时间长，编程周期长，编程时间短。导通状态下的剩余半导体表面电荷密度高达18 mC m(-2)，这解释了大的开/关比。适度栅极场的应用将表面电荷提高到26 mcm(-2)，这是一个很难用传统的场效应管获得的量级，因为它们受到栅极绝缘体介电击穿的限制。通过这种方式，现有的铁电-半导体界面扩展了有机半导体中可实现的场效应能带弯曲。
We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor material. The on- and off-state drain currents differ by several orders of magnitude, and have a long retention time, a high programming cycle endurance and short programming time. The remanent semiconductor surface charge density in the on- state has a high value of 18 mC m(-2), which explains the large on/off ratio. Application of a moderate gate field raises the surface charge to 26 mC m(-2), which is of a magnitude that is very difficult to obtain with conventional FETs because they are limited by dielectric breakdown of the gate insulator. In this way, the present ferroelectric-semiconductor interface extends the attainable field-effect band bending in organic semiconductors.