Anomalous composition and temperature dependence of the energy gap ofAgGa1−xInxSe2mixed crystals
Anomalous composition and temperature dependence of the energy gap ofAgGa1−xInxSe2mixed crystals
复制标题
AgGa1−xInxSe2混晶的反常组成和能隙的温度依赖性
DOI：
10.1103/physrevb.27.5129
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发表时间：
1983
影响因子：
3.7
通讯作者：
Wha
中科院分区：
文献类型：
--
作者：
S. Hahn;Wha
在0≤x≤1时，测量了混合晶体Ag Ga 1−x in x Se 2的晶格常数a和c。在x= 0.0 ~ x= 0.4和x= 0.8 ~ 1.0范围内表现出混相区，在晶格常数a和c的组成依赖性中，在x= 0.6附近表现出不混相区。同时，在x= 0.0 ~ 1.0范围内测量的光导峰能和能隙在x= 0.6附近表现出不连续。在25 ~ 75 K温度范围内，光导峰能温度系数为（1.4 ~ 2.8）× 10−4 eV/K，能隙温度系数为（2.3 ~ 3.8）× 10−4 eV/K。在100 ~ 300 K温度范围内，温度系数的符号相反，分别为-(2.4 ~ 4.1)× 10−4和-(2.4 ~ 5.1)× 10−4 eV/K。
Lattice constants a and c were measured in the mixed crystals Ag Ga 1− x In x Se 2 for 0≤ x≤ 1. They showed a miscibility region from x= 0.0 to x= 0.4 and from x= 0.8 to 1.0, and then immiscibility near x= 0.6 in the composition dependence of the lattice constants a and c. Also, the photoconductivity peak energy and the energy gap measured in the composition range from x= 0.0 to 1.0 showed a discontinuity near x= 0.6. The temperature coefficient of the photoconductivity peak energy is (1.4-2.8)× 10− 4 eV/K and that of the energy gap (2.3-3.8)× 10− 4 eV/K in the temperature range 25-75 K. The sign of the temperature coefficient reverses and the values are-(2.4-4.1)× 10− 4 and-(2.4-5.1)× 10− 4 eV/K, respectively, in the temperature range 100-300 K.