Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN
Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN
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Si和GaN上c面InGaN和m面InGaN的内量子效率
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
K. Evans
中科院分区：
文献类型：
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作者：
X. Ni;J. Lee;Mingzhong Wu;Xing Li;R. Shimada;Ü. Özgür;A. Baski;H. Morkoç;T. Paskova;G. Mulholland;K. Evans
我们研究了c-蓝宝石上的极性（0001）InGaN和m-面GaN和特殊图案化Si上的非极性m-面InGaN的内量子效率（IQE）。从共振光致发光强度与激发功率的关系中提取IQE值。数据表明，在相当的产生的载流子浓度的m-平面InGaN的图案化的Si上的效率是约2倍高于高度优化的c-平面层。在所采用的最高激光激发（1.2×1018 cm−3）下，Si上m面InGaN双异质结构的IQE约为65%。 我们相信，m平面将保持固有的优势，特别是在高的电注入水平，即使是高度优化的c平面品种。观察结果可以归因于缺乏偏振诱导场和预测的增加的光学矩阵元素在m-平面取向。
We investigated internal quantum efficiency (IQE) of polar (0001) InGaN on c-sapphire, and (11¯00) nonpolar m-plane InGaN on both m-plane GaN and specially patterned Si. The IQE values were extracted from the resonant photoluminescence intensity versus the excitation power. Data indicate that at comparable generated carrier concentrations the efficiency of the m-plane InGaN on patterned Si is approximately a factor of 2 higher than that of the highly optimized c-plane layer. At the highest laser excitation employed (∼1.2×1018 cm−3), the IQE of m-plane InGaN double heterostructure on Si is approximately 65%. We believe that the m-plane would remain inherently advantageous, particularly at high electrical injection levels, even with respect to highly optimized c-plane varieties. The observations could be attributed to the lack of polarization induced field and the predicted increased optical matrix elements in m-plane orientation.