Microwave photovoltage and photoresistance effects in ferromagnetic microstrips
Microwave photovoltage and photoresistance effects in ferromagnetic microstrips
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DOI：
10.1103/physrevb.76.224430
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发表时间：
2007-12-01
影响因子：
3.7
通讯作者：
Hu, C. -M.
中科院分区：
文献类型：
--
作者：
Mecking, N.;Gui, Y. S.;Hu, C. -M.
研究了铁磁坡莫合金（Ni80Fe20）微带中铁磁共振引起的直流电响应。由此产生的磁化旋进改变了磁化相对于直流和射频电流的角度。因此，时间平均的各向异性磁阻（AMR）改变（光致电阻）。与此同时，时间相关的AMR振荡整流了一部分射频电流，并感应出直流电压（光电压）。磁电阻的唯象方法是用来描述的光电阻和光伏的独特特性与一致的形式主义，这是发现在很好的协议与实验上进行的平面磁化铁磁微带。讨论了微波光电压效应在射频磁场传感中的应用。
We investigate the dc electric response induced by ferromagnetic resonance in ferromagnetic Permalloy (Ni80Fe20) microstrips. The resulting magnetization precession alters the angle of the magnetization with respect to both dc and rf current. Consequently the time averaged anisotropic magnetoresistance (AMR) changes (photoresistance). At the same time the time-dependent AMR oscillation rectifies a part of the rf current and induces a dc voltage (photovoltage). A phenomenological approach to magnetoresistance is used to describe the distinct characteristics of the photoresistance and photovoltage with a consistent formalism, which is found in excellent agreement with experiments performed on in-plane magnetized ferromagnetic microstrips. Application of the microwave photovoltage effect for rf magnetic field sensing is discussed.