High power single-shot laser ablation of silicon with nanosecond 355 nm
High power single-shot laser ablation of silicon with nanosecond 355 nm
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DOI：
10.1016/j.apsusc.2005.09.040
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发表时间：
2006-09-15
影响因子：
6.7
通讯作者：
Karnakis, D. M.
中科院分区：
文献类型：
--
作者：
Karnakis, D. M.
报道了用纳秒激光在355 nm处对单晶硅进行单次激光烧蚀的实验结果。结果表明，当入射到硅表面的激光强度超过11.5GW/cm(2)时，可以获得高达60微米的异常高的刻蚀深度，这一结果支持了之前在266 nm单次激光刻蚀中刻蚀速率急剧增加的观察结果。激光诱导的爆炸沸腾机制和二次等离子体加热被认为与这种效应有关。(C)2005 Elsevier B.V.保留所有权利。
We report on high intensity single-shot laser ablation of monocrystalline silicon with a nanosecond Nd:YAG at 355 nm. It is shown that for incident laser intensities exceeding similar to 11.5 GW/cm(2) on the silicon surface, unusually high etch depths can be achieved reaching values up to 60 mu m. The results support previous observations of dramatic increase in etch rates in single-shot laser ablation at 266 nm. A laser-induced explosive boiling mechanism together with secondary plasma heating is believed to be associated with this effect. (c) 2005 Elsevier B.V. All rights reserved.