Structural and electronic origin of spin-dependent interface resistance in spintronic Fe/Pt THz emitter by first-principles calculations
Structural and electronic origin of spin-dependent interface resistance in spintronic Fe/Pt THz emitter by first-principles calculations
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DOI：
10.1109/irmmw-thz50927.2022.9895634
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发表时间：
2022-08
期刊：
影响因子：
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通讯作者：
M. C. Escaño;T. Nguyen;V. Mag-usara;M. Talara;M. Tani
中科院分区：
文献类型：
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作者：
M. C. Escaño;T. Nguyen;V. Mag-usara;M. Talara;M. Tani
采用基于自旋密度泛函理论（SDFT）和多通道Landauer自旋输运理论的第一性原理方法，计算了自旋电子Fe/Pt太赫兹发射体中，由于Fe和Pt之间的少数（自旋向上）和多数（自旋向下）导带的移动而引起的界面势垒引起的自旋相关界面电阻.我们发现自旋向上的界面电阻低于自旋向下的界面电阻，这与以前的界面反射率研究一致。自旋输运与结构/电子性质的这种直接相关性对更有效的THz发射器的设计造成了影响。
Using first-principles methods based on spin density functional theory (SDFT) and multichannel Landauer formalism for spin-transport, we calculated the spin-dependent interface resistance arising from the interface potential barrier due to the shifts in minority (spin-up) and majority (spin-down) conduction bands between Fe and Pt in spintronic Fe/Pt THz emitter. We found that the spin-up interface resistance is lower than that of spin-down in agreement with previous interface reflectivity studies. This direct correlation of spin-transport to structural/electronic properties poses impact on the design of more efficient THz emitters.