4f-band of Ce-compounds in photoexcitation and in low energy phenomena
4f-band of Ce-compounds in photoexcitation and in low energy phenomena
复制标题
Ce 化合物在光激发和低能现象中的 4f 能带
DOI：
10.1016/0304-8853(85)90220-3
复制
发表时间：
1985
影响因子：
2.7
通讯作者：
T. Kasuya
中科院分区：
文献类型：
--
作者：
O. Sakai;M. Takeshige;H. Harima;K. Otaki;T. Kasuya
计算了CeSb的铁磁轨道有序态能带结构。计算了由类磁振子散射引起的自能校正项，并表明有一部分表示通过c-f杂化的弛豫过程。f波段的位置很好地对应于PES中的深4f峰。同样的计算也给出了费米表面结构的一个可能的解释。指出了观测浅f波段的可能性。
Energy band structures in the ferromagnetically orbital-ordered state are calculated for CeSb. A self-energy correction term due to the scattering with magnon like modes is calculated, and shown to have a part representing the relaxation process through the c-f hybridization. The location of the f-band well corresponds to the deep 4f peak in PES. The same calculation also gives a probable explanation of the Fermi surface structures. The possibility of observing a shallow f-band is pointed out.