Mechanism of emission-energy tuning in InAs quantum dots using a thin upper confinement layer
Mechanism of emission-energy tuning in InAs quantum dots using a thin upper confinement layer
复制标题
使用薄上限制层调节 InAs 量子点发射能量的机制
DOI：
10.1063/1.2206248
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发表时间：
2006
影响因子：
4
通讯作者：
C. Liu
中科院分区：
文献类型：
--
作者：
Z. Sun;S. Yoon;W. Loke;C. Liu
研究了InAs量子点中使用薄上限制层（UCL）的发射能量调谐机制。通过比较InGaP和InGaAs UCL在InAs/UCL点结构中的发射能量调谐能力，应变调节而不是质量传输被确定为负责InAs量子点中的发射能量调谐的主导机制。基于应变调节机制对UCL的发射能量调谐行为进行了解释。
The emission-energy tuning mechanism in InAs quantum dots using a thin upper confinement layer (UCL) was investigated. By comparing the emission-energy tuning ability of InGaP and InGaAs UCLs in InAs/UCL dot structures, strain adjustment rather than mass transport was identified as the dominant mechanism responsible for emission-energy tuning in the InAs quantum dots. An explanation of the general emission-energy tuning behavior by the UCL was given based on strain adjustment mechanism.