Organic non-volatile memory based on pentacene/tris(8-hydroxy quinoline) aluminum heterojunction transistor
Organic non-volatile memory based on pentacene/tris(8-hydroxy quinoline) aluminum heterojunction transistor
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DOI：
10.1016/j.orgel.2018.02.038
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发表时间：
2018-06
影响因子：
3.2
通讯作者：
Peng Zhang;C. Xudong;Wen Li;Haifeng Ling;Wen-jun Wang;Guang-wei Zhang;M. Yi;Linghai Xie;
中科院分区：
文献类型：
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作者：
Peng Zhang;C. Xudong;Wen Li;Haifeng Ling;Wen-jun Wang;Guang-wei Zhang;M. Yi;Linghai Xie;
通过连续沉积并五苯/三（8-羟基喹啉）铝（Alq 3）层来制造非易失性异质结晶体管存储器。在这种特定的配置中，并五苯用作场效应晶体管存储器的源极和漏极之间的有源层，并且Alq 3被采用作为电荷捕获层。非易失性存储器的操作通过电写入和光照擦除过程来实现。并五苯和Alq 3之间的能带弯曲，由于形成的II型异质结禁止回注的陷阱电荷，表现出滞后的传输特性。特定的异质结结构（没有隧穿层）使得载流子能够在有源层和电荷捕获层之间容易地传输。因此，该器件具有较大的存储窗口（40.3 V，编程电压为−80 V）和小于1 μs的快速写入速度;此外，1位非易失性存储器件的保留时间超过2年。大的存储器窗口、快的写入速度和长的保持时间可以潜在地实现非易失性存储器的实际应用。
Non-volatile heterojunction transistor memory was fabricated by successively depositing pentacene/tris(8-hydroxy quinoline) aluminum(Alq3) layers. In this specified configuration, pentacene functioned as the active layer between the source and drain of field-effect transistor memory, and Alq3was adopted as the charge-trapping layer. Operation of non-volatile memory was implemented by an electrical writing and light illumination erasing procedure. Band bending between pentacene and Alq3due to the formation of a type II heterojunction prohibited back-injection of trapped charges, which demonstrated hysteresis for the transfer characteristics. The specified heterojunction structure (without a tunneling layer) enabled carriers to facilely transport between the active layer and charge trapping layer. Therefore, a large memory window (40.3 V, for a programming voltage of −80 V) and fast writing speed of less than 1 μs were demonstrated; in addition, the 1-bit non-volatile memory device showed a moderate retention time of more than 2 years. The large memory window, fast writing speed, and long retention time can potentially enable practical applications of non-volatile memory.