Low-temperature deposition of hexagonal ferrite films by sputtering
Low-temperature deposition of hexagonal ferrite films by sputtering
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溅射低温沉积六方铁氧体薄膜
DOI：
10.1063/1.355528
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发表时间：
1994
影响因子：
3.2
通讯作者：
M. Naoe
中科院分区：
文献类型：
--
作者：
A. Morisako;H. Nakanishi;M. Matsumoto;M. Naoe
采用直流磁控溅射法在不同衬底温度T_s下制备了Pb掺杂的Ba铁氧体薄膜，并对其晶体结构和磁性进行了研究。铅的替代有利于六方相M相的晶化和结晶度的提高。在温度高于460 °C时制备的薄膜都具有良好的c轴取向，且铅取代的钡铁氧体薄膜的c轴色散角(Δθ50)仅为1°。结果表明，铅掺杂的Ba铁氧体薄膜的矫顽力Hc⊥和Hc∥分别为0.7kOe~1.0kOe、0.2kOe和250~300emu/cm~3。
Pb‐substituted Ba‐ferrite films were prepared at various substrate temperature Ts by dc magnetron sputtering and their crystallographic characteristics and magnetic properties were investigated. The substitution of Pb facilitates the crystallization and improves the crystallinity for hexagonal M phase. All of the films prepared at Ts above 460 °C exhibit a good c‐axis orientation and the c‐axis dispersion angle (Δθ50) for Pb‐substituted Ba‐ferrite films is as small as 1°. The coercivities (Hc⊥) and Hc∥) and saturation magnetization Ms of Pb‐substituted Ba‐ferrite films are 0.7–1.0 kOe, 0.2 kOe and 250–300 emu/cm3, respectively.