Electrothermal Studies of FD SOI Devices That Utilize a New Theoretical Model for the Temperature and Thickness Dependence of the Thermal Conductivity
Electrothermal Studies of FD SOI Devices That Utilize a New Theoretical Model for the Temperature and Thickness Dependence of the Thermal Conductivity
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DOI：
10.1109/ted.2009.2039526
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发表时间：
2010-02
影响因子：
3.1
通讯作者：
D. Vasileska;K. Raleva;S. Goodnick
中科院分区：
文献类型：
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作者：
D. Vasileska;K. Raleva;S. Goodnick
在这个简短的，我们报告的空间和温度依赖性的热导率在薄Si膜上的纳米级绝缘体上硅（SOI）器件的SOI模拟的影响。该模拟器是基于一个组合的合奏Monte Carlo设备模拟器耦合到声子玻尔兹曼输运方程的矩展开。特别是，我们占边界散射和SOI层的有限厚度，在降低其热导率。降低的热导率导致器件中的热点温度更高，源极-漏极电流相应地降低。
In this brief, we report on the effects of the spatial and temperature dependence of the thermal conductivity in thin Si films on the electrothermal simulation of nanoscale silicon-on-insulator (SOI) devices. The electrothermal simulator is based on a combined ensemble Monte Carlo device simulator coupled to moment expansion of the phonon Boltzmann transport equations. In particular, we account for boundary scattering and the finite thickness of the SOI layer in reducing its thermal conductivity. The reduced thermal conductivity leads to a higher hot spot temperature in the device, with a corresponding degradation of the source-drain current.