Shape memory behavior of Fe–Pd alloy thin films prepared by dc magnetron sputtering
Shape memory behavior of Fe–Pd alloy thin films prepared by dc magnetron sputtering
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DOI：
10.1016/s0921-5093(02)00101-6
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发表时间：
2003-01
期刊：
影响因子：
6.4
通讯作者：
S. Inoue;K. Inoue;K. Koterazawa;K. Mizuuchi
中科院分区：
文献类型：
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作者：
S. Inoue;K. Inoue;K. Koterazawa;K. Mizuuchi
采用直流磁控溅射法在石英和硅衬底上沉积了Fe-Pd薄膜。当电弧熔炼Fe-30 at.%以Pd合金圆盘为溅射靶，制备的Fe-Pd薄膜中Pd含量约为24 at.% Pd在所使用的沉积条件下。然后通过将Pd线放置在靶上来修改靶配置，以便以1at.%的精度控制膜的Pd含量警局含28.5at.%的Fe-Pd薄膜Pd在900°C下退火后经历热弹性fcc到fct马氏体转变，随后在冰水中淬火。显然，逆相变也是热弹性的，并且热弹性相变在热循环时重复发生。部分Fe-28.5at.% Pd膜从石英衬底上剥离，它们在变形后加热时表现出SM效应。在薄Si衬底上制备了一种具有椭圆形结构的自支撑薄膜。该膜显示出有吸引力的转变特性，包括约4°C的窄的转变滞后回线以及除了接近室温的Ms（43°C）之外Mf和Af之间的小温差（约10°C）。该薄膜在热循环时表现出可逆的膨胀行为，最大应变约为0.05%。
Fe–Pd films have been deposited onto fused quartz and silicon substrates by dc magnetron sputtering. When an arc-melted and homogenized Fe–30at.% Pd alloy disk was used as a sputtering target, Fe–Pd films fabricated was shown to contain about 24 at.% Pd under the deposition condition used. The target configuration was then modified by placing Pd wires on the target so as to control the Pd content of films with an accuracy of 1 at.% Pd. Fe–Pd films containing 28.5 at.% Pd underwent a thermoelastic fcc-to-fct martensite transformation after annealing at 900°C followed by quenching into iced water. Apparently, the reverse transformation was also thermoelastic and the thermoelastic transformations occurred repeatedly upon thermal cycling. Some of the Fe–28.5at.% Pd films were peeled off from the quartz substrate and they showed SM effects upon heating after deformation. A diaphragm-shaped free-standing film was also fabricated on a thin Si substrate. This film showed attractive transformation characteristics, including a narrow transformation hysteresis loop of about 4°C and a small temperature difference between Mfand Af(about 10°C) in addition to Ms(43°C) close to room temperature. This diaphragm-shaped film showed a reversible ballooning behavior with a maximum strain of about 0.05% upon thermal cycling.