Slope control of molybdenum lines etched with reactive ion etching
Slope control of molybdenum lines etched with reactive ion etching
复制标题
反应离子蚀刻钼线的斜率控制
DOI：
10.1116/1.576869
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
J. Crowe
中科院分区：
文献类型：
--
作者：
Y. Kuo;J. Crowe
采用反应离子蚀刻掩膜侵蚀法制备了高斜度钼线。采用计算机模拟方法考察了影响最终金属斜率的主要因素，如蚀刻时间、蚀刻比（光刻胶对金属的比例）和原始掩蔽轮廓。在高蚀刻率的条件下，可以得到高度倾斜的金属线。实验中，我们研究了控制蚀刻比的等离子体参数，这些参数对最终金属斜率有直接影响：各种气体混合物，如CF4/O2， CF3Cl/O2和CF2Cl2/O2，氧气浓度，压力，总气体流量和自偏置电压。在低压、低氧条件下，CF4/O2等离子体可以获得较高的蚀刻率。高总气体流量也有利于高蚀刻比。扫描电镜图片证实，当原始光刻胶轮廓固定时，最终金属轮廓主要受蚀刻比的影响。俄歇电子能谱（AES）结果表明氟…
A reactive ion etching mask erosion method has been used to prepare highly sloped molybdenum lines. A computer simulation method was used to examine major factors that affect the final metal slope, such as the etch time, the etch ratio (photoresist to metal), and the original masking profile. A highly sloped metal line can be obtained with a high etch ratio. Experimentally, we have studied the following plasma parameters that control the etch ratio, which have a direct impact on the final metal slope: various gas mixtures such as CF4/O2, CF3Cl/O2, and CF2Cl2/O2, oxygen concentration, pressure, total gas flow rate, and self‐bias voltage. A high etch ratio can be obtained with the CF4/O2 plasma in the low‐pressure, low‐oxygen condition. A high total gas flow rate also favors the high etch ratio. Scanning electron microscopy pictures confirm that when the original photoresist profile is fixed, the final metal profile is mainly affected by the etch ratio. Auger electron spectroscopy (AES) results show fluorin...