Scaling the electrical current switching of exchange bias in fully epitaxial antiferromagnet/ferromagnet bilayers
Scaling the electrical current switching of exchange bias in fully epitaxial antiferromagnet/ferromagnet bilayers
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DOI:
10.1103/physrevb.102.014404
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发表时间:
2020-06
影响因子:
3.7
通讯作者:
T. Hajiri;H. Goto;H. Asano
中科院分区:
文献类型:
--
作者:
T. Hajiri;H. Goto;H. Asano
While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current switching of the exchange-bias field (${H}_{\text{ex}}$) in AFM-${\mathrm{Mn}}_{3}A\mathrm{N}$/ferromagnet-${\mathrm{Co}}_{3}\mathrm{FeN}$ bilayers. An applied pulse current can manipulate ${H}_{\text{ex}}$ with respect to the current density and FM layer magnetization, which shifts exponentially as a function of the current density. We found that the saturation current density and exponential decay constant $\ensuremath{\tau}$ increase with the local moment of AFM Mn atoms. Our results highlight the effect of the AFM local moment to electrical current switching of ${H}_{\text{ex}}$, although it has a near-zero net magnetization, and may provide a facile way to explore the electrical current manipulation of AFM materials.