Amorphization, recrystallization and end of range defects in germanium
Amorphization, recrystallization and end of range defects in germanium
复制标题
DOI：
10.1016/j.tsf.2009.09.162
复制
发表时间：
2010-02-26
期刊：
影响因子：
2.1
通讯作者：
Scheiblin, P.
中科院分区：
文献类型：
--
作者：
Claverie, A.;Koffel, S.;Scheiblin, P.
因此，离子注入控制掺杂Ge是一个需要进行基础研究才能优化的过程。我们用电子显微镜实验研究了离子注入(Ge，P，B)和进一步退火过程中Ge的非晶化和再结晶动力学。在Si中，晶态到非晶态的相变是通过损伤随剂量的线性积累而发生的，直到达到一定的阈值，材料变得无定形。我们表明，临界损伤能密度(CDED)模型可以用于预测Ge的存在。本文和文献报道的几乎所有质量/能量/剂量组合的非晶层的位置和扩展。这些非晶层通过固相外延再结晶，遵循我们已经确定的阿雷尼乌斯定律。我们观察到这种再生长导致间隙类型Dunng退火层的扩展缺陷的形成。这些缺陷的尺寸和密度的演化遵循所有的Ostwald熟化机制，当温度升高到600℃时，这种机制变得非保守(缺陷“蒸发”)。这些结果对于模拟注入杂质在Ge中的扩散具有重要的意义，在Ge中可能也存在瞬时扩散。由间隙成分驱动，通常在平衡条件下不明显(C)2009爱思唯尔B V保留所有权利。
The controlled doping of germanium by ion implantation is a process which requires basic research before optimization For this reason. we have experimentally studied by transmission electron microscopy both the kinetics of amorphization and of recrystallization of Ge during ion implantation (Ge, P and B) and further annealing As in Si, the crystalline to amorphous phase transition occurs through the linear accumulation of damage with the dose until a certain threshold is reached above which the material turns amorphous We show that the Critical Damage Energy Density (CDED) model can be used in germanium to predict the existence. position and extension of amorphous layers resulting from the implantation of lolls for almost all mass/energy/dose combinations reported here and in the literature During annealing, these amorphous layers recrystallize by solid-phase epitaxy following an Arrhenius-type law which we have determined We observe that this regrowth results in the formation of extended defects of interstitial type Dunng annealing these defects evolve in size and density following all Ostwald ripening mechanism which becomes non-conservative (defects "evaporate") as the temperature is increased to 600 degrees C These results have important implications for the modeling of diffusion of implanted dopant in Ge Transient diffusion may also exist ill Ge, driven by an interstitial component usually not evidenced tinder equilibrium conditions (C) 2009 Elsevier B V All rights reserved.