Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS
Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS
复制标题
额定1.2kV 4H-SiC超级结VDMOS单粒子烧毁仿真研究
DOI：
10.1109/ted.2021.3102878
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发表时间：
2021-10
影响因子：
3.1
通讯作者：
Tang Zhao-Huan
中科院分区：
文献类型：
--
作者：
Yu Cheng-Hao;Wang Ying;Bao Meng-Tian;Li Xing-Ji;Yang Jian-Qun;Tang Zhao-Huan
对额定电压为1.2 kV的碳化硅（SiC）垂直扩散金属氧化物半导体（VDMOS）超结（SJ）重离子注入引起的漏电流退化和单粒子烧毁（SEB）进行了二维数值模拟。所采用的模拟物理模型进行了验证的重离子辐照实验的商业额定的1.2-kV的SiC共同VDMOS（C-VDMOS），这表明严重退化阈值为500 V的SiC共同SJ VDMOS（C-SJ VDMOS）被证明是敏感的高能重离子和代表比较SEB性能相比，SiC C-VDMOS。模拟了具有不同单缓冲层（SBL）设计的SiC SJ VDMOS对重离子辐照的鲁棒性。结果发现，在源极金属/SiC界面和底部的结构的最高温度可以由缓冲层的厚度妥协。结果表明，具有最佳SBL的SiC SJ VDMOS的退化阈值为800 V，比SiC C-SJ VDMOS提高了60%。
This article presents the 2-D numerical simulation results of the heavy-ion-induced leakage current degradation and single-event burnout (SEB) in the rated 1.2-kV silicon-carbide (SiC) super-junction (SJ) vertical diffusion metal-oxide-semiconductor (VDMOS). The employed simulation physics models were validated by the heavy-ion irradiation experiments of the commercially rated 1.2-kV SiC common VDMOS (C-VDMOS), which indicated a severe degeneration threshold of 500 V. The SiC common SJ VDMOS (C-SJ VDMOS) was proven to be sensitive to high-energy heavy-ion and represents comparative SEB performance compared with the SiC C-VDMOS. The robustness of the SiC SJ VDMOS with different single buffer layer (SBL) designs against a heavy-ion was simulated. It is found that the maximum temperature in the source metal/SiC interface and bottom of the structure could be compromised by the thickness of the buffer layer. As a result, the SiC SJ VDMOS with an optimal SBL exhibited a severe degeneration threshold of 800 V, which was a 60% increase compared to the SiC C-SJ VDMOS.