Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
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DOI：
10.1063/1.2843756
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发表时间：
2008-04-01
影响因子：
3.2
通讯作者：
Yamamoto, Masafumi
中科院分区：
文献类型：
--
作者：
Ishikawa, Takayuki;Hakamata, Shinya;Yamamoto, Masafumi
采用全Heusler合金Co2MnSi薄膜作为上下电极，并采用MgO隧道阻挡层，制备了全外延磁性隧道结（MTJ）。所制备的MTJ显示出明显的交换偏置隧道磁电阻（TMR）特性，室温（RT）和4.2K时的TMR分别为179%和683%。此外，TMR比表现出振荡的MgO隧道势垒厚度（t（MgO））在RT的函数，具有0.28 nm的周期，为t（MgO）范围从1.8到3.0 nm。
Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with full-Heusler alloy Co2MnSi thin films as both lower and upper electrodes and with a MgO tunnel barrier. The fabricated MTJs showed clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 179% at room temperature (RT) and 683% at 4.2 K. In addition, the TMR ratio exhibited oscillations as a function of the MgO tunnel barrier thickness (t(MgO)) at RT, having a period of 0.28 nm, for t(MgO) ranging from 1.8 to 3.0 nm.