Photoreflectance and photoluminescence study of Ga0.76In0.24Sb/GaSb single quantum wells: Band structure and thermal quenching of photoluminescence
Photoreflectance and photoluminescence study of Ga0.76In0.24Sb/GaSb single quantum wells: Band structure and thermal quenching of photoluminescence
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Ga0.76In0.24Sb/GaSb单量子阱的光反射和光致发光研究：能带结构和光致发光的热猝灭
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
A. Forchel
中科院分区：
文献类型：
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作者：
M. Motyka;R. Kudrawiec;J. Misiewicz;M. Hummer;K. Rößner;T. Lehnhardt;M. Müller;A. Forchel
利用光反射（PR）和光致发光（PL）研究了宽度为10 ~ 21 nm的Ga 0.24 In 0.76 Sb/GaSb量子威尔斯阱（QW）的能带结构和PL热猝灭。在PR光谱的情况下，一个强大的GaAs相关的共振，其次是Franz-Keldysh振荡和PR共振与QW基态和激发态之间的光学跃迁已被清楚地观察到。量子阱跃迁已被确定的基础上进行的有效质量模型的框架内的理论计算。理论计算和实验数据之间的令人满意的协议已被发现的导带偏移为1080%-85%，这是一致的理论预测，这是在“模型-固体”理论范围内获得的。在PL测量的情况下，在10-280 K的温度范围内观察到了非常有效的QW发射，没有任何局域化特征。结果表明，热淬火是一种非线性热处理方法。
Photoreflectance (PR) and photoluminescence (PL) have been applied to study the band structure and PL thermal quenching for Ga0.24In0.76Sb/GaSb quantum wells (QWs) of the widths varying from 10 to 21 nm. In the case of PR spectra, a strong GaSb-related resonance followed by Franz–Keldysh oscillations and PR resonances associated with optical transitions between the QW ground and the excited states have been clearly observed. The QW transitions have been identified on the basis of theoretical calculations which were performed in the framework of the effective mass model. Satisfactory agreement between theoretical calculations and experimental data has been found for the conduction band offset of ∼80%–85% that is consistent with the theoretical predictions, which were obtained within the “model-solid” theory. In the case of PL measurements, a very efficient QW emission without any localization features has been observed in the temperature range of 10–280 K. It has been concluded that the thermal quenching o...