High frequency measurements of CoFeHfO thin films
High frequency measurements of CoFeHfO thin films
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DOI：
10.1109/20.951138
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发表时间：
2001-07
影响因子：
2.1
通讯作者：
S. Russek;P. Kabos;T. Silva;F. Mancoff;Dexin Wang;Z. Qian;J. Daughton
中科院分区：
文献类型：
--
作者：
S. Russek;P. Kabos;T. Silva;F. Mancoff;Dexin Wang;Z. Qian;J. Daughton
在0.1 GHz ~ 6 GHz的频率范围内，对CoFeHfO薄膜的横向磁化率和阻尼常数随薄膜电阻率、厚度和温度的变化进行了高频测量。薄膜电阻率变化范围为250 /spl mu//spl Omega/cm ~ 2100 /spl mu//spl Omega/cm。薄膜在高频处表现出较低的阻尼，阻尼常数/spl α /在0.01 ~ 0.06之间。阻尼常数随薄膜电阻率增大而增大，对于电阻率最高的薄膜，阻尼常数随厚度增大而减小。在4 ~ 300 K的温度范围内，阻尼常数、诱导各向异性和薄膜电阻率表现出较弱的温度依赖性。低阻尼常数，加上高各向异性，大电阻率和大自旋相关的隧道磁电阻，使这种材料对几种高频磁器件应用具有吸引力。
High-frequency measurements of the transverse susceptibility and damping constant of CoFeHfO thin films have been made over a frequency range of 0.1 GHz to 6 GHz as a function of film resistivity, thickness, and temperature. The film resistivity varied from 250 /spl mu//spl Omega/cm to 2100 /spl mu//spl Omega/cm. The films show relatively low damping at high frequencies with the damping constant /spl alpha/ ranging from 0.01 to 0.06. The damping constant increases with film resistivity and, for the highest resistivity films, the damping constant decreases as the thickness increases. The damping constant, induced anisotropy, and film resistivity show weak temperature dependence over a temperature range from 4 K to 300 K. The low damping constant, in conjunction with the high anisotropy, large resistivity, and large spin-dependent-tunneling magnetoresistance, makes this material attractive for several high-frequency magnetic device applications.