Quantitative relevance of substitutional impurities to carrier dynamics in diamond
Quantitative relevance of substitutional impurities to carrier dynamics in diamond
复制标题
金刚石中替代杂质与载流子动力学的定量相关性
DOI：
10.1103/physrevmaterials.2.094601
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发表时间：
2018
影响因子：
3.4
通讯作者：
and Nobuko Naka
中科院分区：
文献类型：
--
作者：
Takaaki Shimomura;Yoshiki Kubo;Julien Barjon;Norio Tokuda;Ikuko Akimoto;and Nobuko Naka
我们已经将人造金刚石晶体中的替代杂质浓度量化到了十亿分之几的水平。通过光激发注入的电子和激子的捕获寿命进行了比较，几个样品具有不同的杂质浓度。根据估算的杂质浓度，我们确定了硼杂质的电子俘获截面和氮杂质的激子俘获截面。通过包括杂质和激子的载流子散射，成功地再现了不同载流子种类的迁移率值的一般趋势。
We have quantified substitutional impurity concentrations in synthetic diamond crystals down to sub-parts-per-billion levels. The capture lifetimes of electrons and excitons injected via photoexcitation were compared for several samples with different impurity concentrations. Based on the assessed impurity concentrations, we have determined the capture cross section of electrons for boron impurity,, and that of excitons for nitrogen impurity,. The general tendency of the mobility values for different carrier species is successfully reproduced by including carrier scattering by impurities and excitons.