Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice
Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice
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InAs/GaSb 超晶格中 InAs 纳米线晶格的自发生长
DOI：
10.1063/1.1526164
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发表时间：
2002
影响因子：
4
通讯作者：
M. Goldenberg
中科院分区：
文献类型：
--
作者：
B. Nosho;B. R. Bennett;L. Whitman;M. Goldenberg
我们描述了一种 InAs 纳米线晶格，它在高 As4 通量下生长的 InAs/GaSb 超晶格内自发地在三个维度上组织。通过 X 射线衍射和横截面扫描隧道显微镜表征，周期性纳米线高约 10 nm，宽 120 nm，沿 [110] 长许多微米，在超晶格内具有面心立方垂直排序。不寻常的垂直排序产生了纳米线周期一半的横向成分调制。该结构似乎是由 InAs 失配应力与特定的 InAs 和 GaSb 生长动力学效应相结合产生的。
We describe a lattice of InAs nanowires that spontaneously organizes in three dimensions within an InAs/GaSb superlattice grown under high As4 flux. As characterized by x-ray diffraction and cross-sectional scanning tunneling microscopy, the periodic nanowires are ∼10 nm high, 120 nm wide, and many microns long along [110], with face-centered cubic-like vertical ordering within the superlattice. The unusual vertical ordering creates a lateral composition modulation with half the period of the nanowires. The structure appears to arise from the InAs misfit stress combined with specific InAs and GaSb growth kinetic effects.