One-dimensional GaN nanomaterials transformed from one-dimensional Ga2O3 and Ga nanomaterials
One-dimensional GaN nanomaterials transformed from one-dimensional Ga2O3 and Ga nanomaterials
复制标题
由一维Ga2O3和Ga纳米材料转变而来的一维GaN纳米材料
DOI：
10.1007/bf03353597
复制
发表时间：
2009-01-01
影响因子：
26.6
通讯作者：
Zhang, X. H.
中科院分区：
文献类型：
--
作者：
Han, X. Y.;Gao, Y. H.;Zhang, X. H.
One-dimensional (1D) GaN nanomaterials exhibiting various morphologies and atomic structures were prepared via ammoniation of either Ga2O3 nanoribbons, Ga2O3 nanorods or Ga nanowires filled into carbon nanotubes (CNTs). The 1D GaN nanomaterials transformed from Ga2O3 nanoribbons consisted of numerous GaN nanoplatelets having the close-packed plane, i.e. (0002)2H or (111)3C parallel to the axes of starting nanoribbons. The 1D GaN nanomaterials converted from Ga2O3 nanorods were polycrystalline rods covered with GaN nanoparticles along the axes. The 1D GaN nanomaterials prepared from Ga nanowires filled into CNTs displayed two dominant morphologies: (i) single crystalline GaN nanocolumns coated by CNTs, and (ii) pure single crystalline GaN nanowires. The cross-sectional shape of GaN nanowires were analyzed through the transmission electron microscopy (TEM) images. Formation mechanism of all-mentioned 1D GaN nanomaterials is then thoroughly discussed.
