Carrier recombination rate in GaAs-AlGaAs single quantum well lasers under high levels of excitation
Carrier recombination rate in GaAs-AlGaAs single quantum well lasers under high levels of excitation
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高强度激发下 GaAs-AlGaAs 单量子阱激光器的载流子复合率
DOI：
10.1063/1.102979
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发表时间：
1990
影响因子：
4
通讯作者：
R. Waters
中科院分区：
文献类型：
--
作者：
P. Wang;K. K. Lee;G. Yao;Ying;R. Waters
利用小信号技术研究了GaAs-AlGaAs单量子阱层中载流子的复合率，载流子密度从1017到1019/cm 3。对于高达1018/cm 3的载流子密度，微分载流子寿命的倒数1/τd随载流子密度线性增加。然而，微分速率在较高的载流子密度下饱和，并且对于高于1019/cm 3的载流子密度保持几乎恒定。与体复合行为的偏差是由于注入的载流子的一部分占据了辐射跃迁速率小得多的连续态。实验数据表明，在短腔激光器中通常观察到的阈值电流随着腔长的减小而失控增加主要是由于在高载流子密度下载流子限制的损失，而不是由于快速载流子耗尽过程，例如俄歇复合。
The carrier recombination rate in GaAs‐AlGaAs single quantum well layers is investigated using a small‐signal technique for carrier densities from 1017 to 1019/cm3. For carrier densities up to mid 1018/cm3, the inverse of the differential carrier lifetime, 1/τd, increases linearly with the carrier density. The differential rate, however, saturates at higher carrier densities and remains nearly constant for carrier densities higher than 1019/cm3. The deviation from the bulk recombination behavior is due to a portion of the injected carriers populating the semicontinuum states where the rate for the radiative transition is much smaller. The experimental data indicate that the runaway increase of threshold current with decreasing cavity length commonly observed in the short‐cavity lasers is mainly due to the loss of carrier confinement at high carrier densities rather than due to fast carrier‐depleting processes, such as Auger recombination.