Selective Growth of InGaAs/InP Layers by Gas Source Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
Selective Growth of InGaAs/InP Layers by Gas Source Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
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原子氢辐照气源分子束外延选择性生长 InGaAs/InP 层
DOI：
10.1143/jjap.32.l1627
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
Mitsuhiro Kitamura Mitsuhiro Kitamura
中科院分区：
文献类型：
--
作者：
Naotaka Kuroda;S. Sugou;Tatsuya Sasaki Tatsuya Sasaki;Mitsuhiro Kitamura Mitsuhiro Kitamura
在氢原子辐照下，首次证明了在掩模图案InP衬底上选择性气源分子束外延（gas source MBE）生长高质量InGaAs/InP层。在原子氢辐照下，InP选择性生长的多晶密度降低了3个数量级以上。高质量InGaAs/InP多量子阱（MQW）结构的选择性生长也得到了证明。光致发光（PL）光谱结果表明，该MQW结构的峰值波长与掩模条纹宽度无关，但与条纹间距宽度有显著的相关性。
Selective gas source molecular beam epitaxy (gas source MBE) growth of high-quality InGaAs/InP layers on mask-patterned InP substrates is demonstrated for the first time with atomic hydrogen irradiation. A decrease in polycrystalline density of over 3 orders of magnitude is achieved for InP selective growth by atomic hydrogen irradiation. The selective growth of high-quality InGaAs/InP multiple quantum-well (MQW) structures is also demonstrated. Photoluminescence (PL) spectroscopy indicates that the peak-wavelength of she MQW structure does not depend on the mask stripe width, but significant peak-wavelength dependence on the stripe spacing width was observed.