High-Speed Silicon Modulator With Slow-Wave Electrodes and Fully Independent Differential Drive
High-Speed Silicon Modulator With Slow-Wave Electrodes and Fully Independent Differential Drive
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DOI：
10.1109/jlt.2014.2323954
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发表时间：
2014-06-15
影响因子：
4.7
通讯作者：
Hochberg, Michael
中科院分区：
文献类型：
--
作者：
Ding, Ran;Liu, Yang;Hochberg, Michael
我们展示了一个完全独立的差分驱动能力的行波调制器在硅慢波传输线电极。报道的3.5 mm器件在-1 V偏置下实现了27 GHz的带宽，小信号V pi为7.8 V，阻抗为50 Ω。提高阻抗到这个程度需要有效地扩大RF模式的大小，并从根本上改变RF相速度，但我们表明，这可以做到两个手臂和整体速度失配之间的串扰效应最小，因此，具有高EO带宽实现。40-Gb/s的操作演示与1.6-V-pp差分驱动，和铌酸锂调制器的性能比较。
We demonstrate a fully independent differential-drive capable of traveling-wave modulator in silicon using slow-wave transmission line electrode. The reported 3.5-mm device achieves a bandwidth of 27 GHz at -1 V bias with 7.8-V small signal V pi and 50-Omega impedance. Raising the impedance to this extent requires effectively expanding the RF mode size and radically changes the RF phase velocity, but we show that this can be done with minimal crosstalk effects between the two arms and overall velocity mismatch, and thus, with a high EO bandwidth achieved. 40-Gb/s operation is demonstrated with 1.6-V-pp differential-drive, and performance comparisons to Lithium Niobate modulators are made.