Analysis of the spectra of In XII–XIV and Sn XIII–XV in the far-VUV region

Analysis of the spectra of In XII–XIV and Sn XIII–XV in the far-VUV region
复制标题

In XII–XIV 和 Sn XIII–XV 远 VUV 区域的光谱分析

DOI:
--
复制
发表时间:
2006
期刊:
影响因子:
--
通讯作者:
A. Ryabtsev
A. Ryabtsev
中科院分区:
--
文献类型:
--
作者:
S. Churilov;A. Ryabtsev

文献摘要

被引文献

相似文献

研究了In XIII-Sn XIV的4p 64 d-(4p 65 p +4p 64 f +4p 54 d2)跃迁和In XII-Sn XIII的4p 64 d2-(4p 64 d5 p +4p 64 d4 f +4p 54 d3)跃迁。首次对120-160 nm波长范围内的150条光谱线进行了分类,这对投影真空紫外光刻是很重要的。在In XIII和Sn XIV的各光谱中,测量基态4p 64 d2 D的精细结构间隔和4p 65 p、4p 64 f和4p 54 d2构型的8个能级的能量。在In XII和Sn XIII的光谱中,确定了基态组态4p 64 d2的所有能级和相互作用组态(4p 65 p +4p 64 f +4p 54 d3)的35个能级的能量。在In XIV和Sn XV的光谱中还发现了4p 61 S 0 - 4p 54 d1 P1的共振跃迁。通过测量能级能量的均方拟合确定的研究中的配置的半经验参数是一致的沿着两个等电子和等电子序列的光谱。
The 4p64d−(4p65p + 4p64f + 4p54d2) transitions in the spectra of In XIII-Sn XIV and the 4p64d2−(4p64d5p + 4p64d4f + 4p54d3) transitions in the spectra of In XII-Sn XIII are investigated. About 150 spectral lines in the wavelength range 120–160 Å, which is important for projection vacuum UV lithography, have been classified for the first time. The fine structure intervals of the ground state 4p64d2D and the energies of eight levels of the 4p65p, 4p64f, and 4p54d2 configurations are measured in each spectrum of In XIII and Sn XIV. The energies of all levels of the ground configuration 4p64d2 and the energies of 35 levels of the interacting configurations (4p65p + 4p64f + 4p54d3) are determined in the spectra of In XII and Sn XIII. The resonant transitions 4p61S0−4p54d1P1 in the spectra of In XIV and Sn XV are also identified. The semiempirical parameters of the configurations under study determined by mean-square fitting of measured level energies are in agreement along both isoelectronic and isonuclear sequences of the spectra.