Properties of titanium oxide synthesized by pulsed metal vacuum arc deposition
Properties of titanium oxide synthesized by pulsed metal vacuum arc deposition
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DOI：
10.1016/s0257-8972(03)00660-1
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发表时间：
2004
影响因子：
5.4
通讯作者：
Y. Leng;J. Chen;H. Sun;P. Yang;G. Wan;J. Wang;N. Huang
中科院分区：
文献类型：
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作者：
Y. Leng;J. Chen;H. Sun;P. Yang;G. Wan;J. Wang;N. Huang
在这项工作中，使用脉冲金属真空电弧沉积在 Ti6Al4V 和硅（100）基底上沉积 TiO2 薄膜。沉积态样品在 8.0×10−4Pa 压力下于 800 °C 退火 30 分钟。通过XPS、RBS测定薄膜成分，并通过AFM研究表面形貌。 XRD 显示沉积薄膜可能由锐钛矿型、板钛矿型或金红石型 TiO2 组成。在800℃、8.0×10−4Pa压力下退火30min后，薄膜变成金红石型TiO2(110)(101)(200)(211)(002)，并且在高氧压力下择优取向从(110)变为(101)和(002)。因此，可以得出结论，当在 800 °C 退火 30 分钟时，在较高氧分压下沉积的样品中，平行于表面的 (002) 和 (101) 平面上的生长变得更占主导地位。 XRD 和接触模式 AFM 表明沉积薄膜非常致密，由尺寸为 80-100 nm 的晶粒组成，而退火薄膜具有超过 400 nm 的较大晶粒。 RBS结果表明，不同氧压下沉积的钛氧化物在退火后O/Ti比几乎相同。结果表明，薄膜中所有的“低价”氧化钛相都已被氧化为金红石TiO2，但退火薄膜的晶体取向不同。氧化钛的耐磨性比Ti6Al4V提高了约10倍。
In this work, TiO2films were deposited on Ti6Al4V and silicon(100) substrates using pulsed metal vacuum arc deposition. The as-deposited samples were annealed at 800 °C for 30 min at a pressure of 8.0×10−4Pa. The film composition was determined by XPS, RBS and the surface morphology were studied by AFM. XRD shows that the as-deposited films may consist of anatase, brookite or rutile TiO2. After annealing at 800 °C for 30 min at a pressure of 8.0×10−4Pa, the films become rutile TiO2(110)(101)(200)(211)(002) and the preferred orientation changes from (110) to (101) and (002) at high oxygen pressure. Thus, it can be concluded that the growth on the (002) and (101) plane parallel to the surface becomes more dominant in samples deposited at higher oxygen partial pressures when annealed at 800 °C for 30 min. XRD and contact mode AFM disclose that the as-deposited films are quite dense and composed of grains 80–100 nm in size, whereas the annealed films have larger grains exceeding 400 nm. The RBS results show that O/Ti ratio of the titanium oxide deposited at different oxygen pressure become nearly the same after annealing. The results suggest that all of the ‘low valence’ titanium oxide phases in the film have been oxidized to be rutile TiO2, but the crystalline orientation of the annealed films is different. The wear resistance of titanium oxide increased approximately 10-fold compared with Ti6Al4V.