Critical diameter for III-V nanowires grown on lattice-mismatched substrates
Critical diameter for III-V nanowires grown on lattice-mismatched substrates
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DOI：
10.1063/1.2436655
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发表时间：
2007-01-22
影响因子：
4
通讯作者：
Crankshaw, Shanna
中科院分区：
文献类型：
--
作者：
Chuang, Linus C.;Moewe, Michael;Crankshaw, Shanna
作者报道了使用Au催化的气-液-固生长在晶格失配衬底上生长的III-V族化合物半导体外延纳米线（NWs）的临界直径（CD）的实验观察。发现CD与晶格失配成反比。使用比CD更小的催化剂合成具有良好排列取向的纳米线。生长在Si衬底上的对准良好的InP纳米线表现出创纪录的低光致发光线宽（5.1 meV）和大的蓝移（173 meV），由于量子化的InP带隙能量。在Si衬底上生长的对准InAs纳米线也被证明。(c)2007年，美国物理学会。
The authors report the experimental observation of a critical diameter (CD) of III-V compound semiconductor epitaxial nanowires (NWs) grown on lattice-mismatched substrates using Au-catalyzed vapor-liquid-solid growth. The CD is found to be inversely proportional to the lattice mismatch. NWs with well-aligned orientation are synthesized with catalysts smaller than the CD. Well-aligned InP NWs grown on a Si substrate exhibit a record low photoluminescence linewidth (5.1 meV) and a large blueshift (173 meV) from the InP band gap energy due to quantization. Well-aligned InAs NWs grown on a Si substrate are also demonstrated. (c) 2007 American Institute of Physics.