1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells
1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells
复制标题
利用 InGaAs-AlAs-AlAsSb 耦合量子阱中的子带间吸收实现 1.55 μm 皮秒全光开关
DOI：
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发表时间：
2002
影响因子：
2.6
通讯作者：
Osamu Wada
中科院分区：
文献类型：
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作者：
Tomoyuki Akiyama;Nikolai Georgiev;T. Mozume;H. Yoshida;A. Gopal;Osamu Wada
我们报道了在光通信波长（/spl sim/1.55 /spl mu/m）下子带间吸收的第一个全光开关操作。通过InGaAs-AlAs-AlAsSb耦合量子阱实现了1.55-/spl mu/m的子带间吸收。在控制脉冲能量低至27 pJ的情况下，成功地演示了对超快信号（相当于1太赫兹）的开关操作。
We report on the first all-optical switching operation of intersubband absorption at an optical communication wavelength (/spl sim/1.55 /spl mu/m). The 1.55-/spl mu/m intersubband absorption was achieved by InGaAs-AlAs-AlAsSb coupled quantum wells. A switching operation on an ultrafast signal (equivalent to 1 THz) was successfully demonstrated with a control pulse energy as low as 27 pJ.