On the Excess Noise Factors and Noise Parameter Equations for RF CMOS
On the Excess Noise Factors and Noise Parameter Equations for RF CMOS
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RF CMOS的超额噪声系数和噪声参数方程
DOI：
10.1109/smic.2007.322764
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
J. Cressler
中科院分区：
文献类型：
--
作者：
Yan Cui;G. Niu;Ying Li;S. S. Taylor;Q. Liang;J. Cressler
本文研究了CMOS晶体管中gd0和gm参考漏极电流过量噪声系数随沟道长度和偏置的变化关系。利用标准的线性噪声双端口理论，我们提出了一个简单的推导噪声参数。结果与著名的福井的经验FET噪声方程。在0.18妈妈CMOS工艺的实验数据进行测量，并用于评估简单的模型方程
This work examines the differences between the gd0 and gm referenced drain current excess noise factors in CMOS transistors as a function of channel length and bias. Using standard linear noisy two-port theory, we present a simple derivation of noise parameters. The results are compared with the well known Fukui's empirical FET noise equations. Experimental data on a 0.18 mum CMOS process are measured and used to evaluate the simple model equations