Valence‐band‐edge shift due to doping in p+ GaAs
Valence‐band‐edge shift due to doping in p+ GaAs
复制标题
p+ GaAs 掺杂引起的价带边缘偏移
DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
J. Woodall
中科院分区：
文献类型：
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作者：
J. Silberman;T. Lyon;J. Woodall
由于重掺杂效应导致的价带和导带边缘偏移的准确知识对于利用重掺杂层的GaAs器件结构建模至关重要。通过测定材料中Ga和As核心能级的体结合能，利用X射线光导光谱法推导出碳（p型）掺杂引起的价带边位移到载流子密度为1×1020 cm−3。对数据的分析表明，价带最大值向间隙的位移和费米能级向价带的穿透正好补偿了简并载流子浓度，得到ΔEv =0.12±0.05 eV。
Accurate knowledge of the shifts in valence‐ and conduction‐band edges due to heavy doping effects is crucial in modeling GaAs device structures that utilize heavily doped layers. X‐ray photoemission spectroscopy was used to deduce the shift in the valence‐band‐edge induced by carbon (p type) doping to a carrier density of 1×1020 cm−3 based on a determination of the bulk binding energy of the Ga and As core levels in this material. Analysis of the data indicates that the shift of the valence‐band maximum into the gap and the penetration of the Fermi level into the valence bands exactly compensate at this degenerate carrier concentration, to give ΔEv =0.12±0.05 eV.