Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors
Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors
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DOI：
10.1016/j.tsf.2016.02.021
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发表时间：
2016-10-30
期刊：
影响因子：
2.1
通讯作者：
Alquier, Daniel
中科院分区：
文献类型：
--
作者：
Dahiya, Abhishek Singh;Opoku, Charles;Alquier, Daniel
在目前的工作中，我们报告了高性能的氧化锌（ZnO）纳米片（NS）为基础的源极-栅极晶体管（SGT）的非对称肖特基源极和漏极欧姆接触：低饱和漏极-源极电压（类似于2 V）的输出扫描（即使在高栅极电压），高电流开/关比（>10（7））和低关断电流（0.1 pA）。为了更深入地理解器件机理和金属-半导体接触界面的电荷输运，进行了温度依赖的电流-电压研究。他们揭示了器件的操作可以归因于3个主要过程：i）反向偏置肖特基源极接触，其基本上控制电荷载流子注入到NS沟道中，ii）栅极场对源极势垒的有效操纵，以及iii）源极接触下方的耗尽区的调制。这些结果可能会改善未来几代的ZnO基SGT的薄膜晶体管的设计，提供了几个优点，包括低功耗，小信号放大，并作为电子电路的有源负载。(C)© 2016 Elsevier B. V.版权所有
In the present work, we report the high performance of zinc oxide (ZnO) nanosheet (NS) based source-gated transistors (SGTs) with asymmetric Schottky source and ohmic drain contacts: low saturation drain-source voltages (similar to 2 V) in the output scans (even at high gate voltages), high current on/off ratio (>10(7)) and low off-currents (0.1 pA). For a deeper understanding of the device mechanism and charge transport at metal-semiconductor contact interface, temperature dependent current-voltage studies have been performed. They revealed that the device operation can be ascribed to 3 main processes: i) the reverse biased Schottky source contact, which essentially controls charge carrier injection in to the NS channel, ii) effective manipulation of the source barrier by the gate field and iii) modulation of the depletion region beneath the source contact. These results are likely to improve the future generations of the ZnO based SGTs which offer several advantages for thin-film transistor design, including low power dissipation, small signal amplification, and as active load for the electronic circuits. (C) 2016 Elsevier B.V. All rights reserved,