Half-metallic Fe3O4 films for high-sensitivity magnetoresistive devices
Half-metallic Fe3O4 films for high-sensitivity magnetoresistive devices
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DOI：
10.1109/tmag.2003.821164
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发表时间：
2004-01-01
影响因子：
2.1
通讯作者：
Matsui, M
中科院分区：
文献类型：
--
作者：
Takahashi, H;Soeya, S;Matsui, M
通过在 MgO (100) 基底上进行射频溅射，我们制备了 Fe3O4 (111) 金属和 Fe3O4 (001)/TiN (001) 薄膜，其 Verwey 温度 (T-V) 接近 120 K。这些 Fe3O4 薄膜的饱和磁化强度和电阻率与块体 Fe3O4 相当，并且磁阻 (MR) 比和 MR 比面积积 ADeltaR 使用 Fe3O4 (111) 对各种材料结构的电流垂直于平面 (CPP) 样品进行测量，在 120 K 时急剧增加。T-V 附近的这种增加似乎与 Fe3O4 晶体的变化有关。另一方面，使用 Fe3O4 (001) 的 CPP-GMR 样品，如 Ni80Fe20/TiN/Fe3O4 (001)/TiN (001)、Co75Fe25/TiN/Fe3O4 (001)/TiN (001) 和 Fe3O4/TiN/Fe3O4 (001)/TiN (001) 的 ADeltaR 和 MR 为 比使用 Fe3O4 (111) 的 CPP-GMR 样品大 2-4 倍。对于 Fe3O4 (001)，T-V 下 MR 的增加小于 Fe3O4 (111)。
By RF sputtering on a MgO (100) substrate, we have made Fe3O4 (111) metal and Fe3O4 (001)/TiN (001) films that have Verwey temperature (T-V) near 120 K. The saturation magnetizations and resistivities of those Fe3O4 films were comparable to those of bulk Fe3O4, and the magnetoresistive (MR) ratio and MR ratio area product ADeltaR measured for various materials structures of current perpendicular to plane (CPP) samples using Fe3O4 (111) increased sharply at 120 K. This increase around T-V seemed to be related to the change in the Fe3O4 crystal. The ADeltaR and MR of CPP-GMR samples using Fe3O4 (001), on the other hand, such as Ni80Fe20/TiN/Fe3O4 (001)/TiN (001), Co75Fe25/TiN/Fe3O4 (001)/TiN (001), and Fe3O4/TiN/Fe3O4 (001)/TiN (001), were 2-4 times larger than those of CPP-GMR samples using Fe3O4 (111) were. And for Fe3O4 (001) the increase of MR at T-V was smaller than it was for Fe3O4 (111).