High-Sensitivity pH Sensor Based on Electrolyte-Gated In2O3 TFT
High-Sensitivity pH Sensor Based on Electrolyte-Gated In2O3 TFT
复制标题
基于电解质门控 In2O3 TFT 的高灵敏度 pH 传感器
DOI：
10.1109/led.2018.2857925
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发表时间：
2018-09-01
影响因子：
4.9
通讯作者：
Wang, Gang
中科院分区：
文献类型：
--
作者：
Cai, Guangshuo;Qian, Lei;Wang, Gang
本文介绍了一种基于氧化铟沟道电解质栅控薄膜晶体管（EGTFT）的pH传感器。在pH2.00 ~ pH9.18范围内，在低工作电压（<1.2V）下，pH灵敏度高达~75 mV/pH，超过了59 mV/pH的能斯特极限。结果表明，EGTFT可能是一个潜在的候选生物化学传感器。
In this letter, a pH sensor was demonstrated based on In2O3-channel electrolyte-gated thin-film transistor (EGTFT). The pH sensitivity is as high as ~75 mV/pH under low operation voltage (<1.2 V) in the range of pH 2.00 to pH 9.18, which is over the Nernst limit of 59 mV/pH. A new theory was developed to interpret the high pH sensitivity by considering the solution as a gate dielectric. The results suggest that the EGTFT could be a potential candidate for biochemical sensors.