Fabrication of vertically aligned single-crystalline boron nanowire arrays and investigation of their field-emission behavior
Fabrication of vertically aligned single-crystalline boron nanowire arrays and investigation of their field-emission behavior
复制标题
垂直排列单晶硼纳米线阵列的制备及其场致发射行为的研究
DOI：
10.1002/adma.200800137
复制
发表时间：
2008-07-02
影响因子：
29.4
通讯作者：
Gao, Hongjun
中科院分区：
文献类型：
--
作者：
Liu, Fei;Tian, Jifa;Gao, Hongjun
通过热碳还原形成了定向单晶硼纳米线阵列。SEM图像显示了硼纳米线的阵列（约. 5 μ m长）在Si衬底上高密度地垂直排列。这些纳米线具有高的增强因子、良好的发射稳定性，并且可以承受大电流，这表明它们是场发射应用的优秀候选者。
Aligned single crystalline boron nanowire arrays are formed by thermal carbon reduction. The SEM image shows an array of boron nanowires (ca. 5 mu m long) vertically aligned in high density on a Si substrate. These nanowires have a high enhancement factor, good emission stability, and can endure high current, which suggest they are an excellent candidate for field-emission applications.