Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer
Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer
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包含氮化镓中间层的 340 nm 发光二极管的温度依赖性行为
DOI：
10.1088/0022-3727/41/9/094004
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Airey R
中科院分区：
文献类型：
--
作者：
Airey R
已经生产出具有提高的效率的紫外发光二极管。效率的提高是通过在AlN缓冲层和随后的AlGaN层之间引入薄GaN层来实现的。GaN中间层导致传播通过紫外发光结构的穿透位错的数量减少。温度依赖的电致发光测量表明，在高达400 K的温度下的性能得到改善。
Ultra-violet light emitting diodes with an increased efficiency have been produced. The increase in efficiency was brought about by the introduction of a thin GaN layer between the AlN buffer and the subsequent AlGaN layers. The GaN interlayer causes a reduction in the number of threading dislocations that propagate through the ultra-violet light emitting structure. Temperature dependent electroluminescence measurements show an improved performance at temperatures up to 400 K.